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STL80N3LLH6 N-channel 30 V, 0.0046 , 21 A PowerFLATTM(5x6) STripFETTM VI DeepGATETM Power MOSFET Preliminary data Features RDS(on) Type VDSS ID max STL80N3LLH6 30 V 0.0052 21 A (1) 1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) PowerFLATTM ( 5x6 ) High avalanche ruggedness Low gate drive power losses Very low switching gate charge Application Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 6th generation of design rules of ST's proprietary STripFETTM technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Table 1. Device summary Order code Marking Package Packaging STL80N3LLH6 80N3LLH6 PowerFLATTM (5x6) Tape and reel March 2010 Doc ID 16773 Rev 2 1/10 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 10 change without notice. Contents STL80N3LLH6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits ... 6 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2/10 Doc ID 16773 Rev 2 STL80N3LLH6 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0)