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STL80N3LLH6
N-channel 30 V, 0.0046 , 21 A PowerFLATTM(5x6)
STripFETTM VI DeepGATETM Power MOSFET
Preliminary data
Features
RDS(on)
Type VDSS ID
max
STL80N3LLH6 30 V 0.0052 21 A (1)
1. The value is rated according Rthj-pcb
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
PowerFLATTM ( 5x6 )
High avalanche ruggedness
Low gate drive power losses
Very low switching gate charge
Application
Switching applications Figure 1. Internal schematic diagram
Description
This product utilizes the 6th generation of design
rules of ST's proprietary STripFETTM technology,
with a new gate structure.The resulting Power
MOSFET exhibits the lowest RDS(on) in all
packages.
Table 1. Device summary
Order code Marking Package Packaging
STL80N3LLH6 80N3LLH6 PowerFLATTM (5x6) Tape and reel
March 2010 Doc ID 16773 Rev 2 1/10
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 10
change without notice.
Contents STL80N3LLH6
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Test circuits .............................................. 6
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2/10 Doc ID 16773 Rev 2
STL80N3LLH6 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 30 V
VGS Gate-source voltage