File information: | |
File name: | am81719-040.pdf [preview am81719-040] |
Size: | 44 kB |
Extension: | |
Mfg: | ST |
Model: | am81719-040 🔎 am81719040 |
Original: | am81719-040 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors ST am81719-040.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 14-07-2020 |
User: | Anonymous |
Multipart: | No multipart |
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Decompress result: | OK | |
Extracted files: | 1 | |
File name am81719-040.pdf AM81719-040 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS PRELIMINARY DAT A . . REFRACTORY/GOLD METALLIZATION . . EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING . . OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 40 W MIN. WITH 7 dB GAIN .400 X .400 2 LF L (M228) hermetically sealed ORDER CO DE BRANDING AM81719-040 81719-40 PIN CONNECTION DESCRIPTION The AM81719-040 is a high power silicon NPN bipolar transistor designed for Class C, CW com- munications and telemetry applications in the 1.75 - 1.85 GHz frequency range. An emitter-ballasted refractory-gold overlay die geometry with computerized automatic wire- bonding is employed to ensure long-term reliabil- 1. Collector 3. Emitter ity and product consistency. 2. Base 4. Base ABSOLUTE MAXIMUM RATINGS (Tcase = 25 |
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