Philips pbss4160ds free download

File name pbss4160ds.pdf

PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Rev. 04 -- 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. PNP/PNP complement: PBSS5160DS. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications Dual low power switches (e.g. motors, fans) Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor VCEO collector-emitter voltage open base - - 60 V IC collector current [1] - - 1 A ICM peak collector current single pulse; - - 2 A tp 1 ms RCEsat collector-emitter saturation IC = 1 A; [2] - 200 250 m resistance IB = 100 mA [1] Device mounted on a ceramic PCB, Al2O3, standard footprint. [2] Pulse test: tp 300 s; 0.02. NXP Semiconductors PBSS4160DS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1 emitter TR1 6 5 4 6 5 4 2 base TR1 3 collector TR2 TR2 4 emitter TR2 TR1 1 2 3 5 base TR2