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Descr: . Electronic Components Datasheets Active components Transistors Philips pbhv8115z.pdf
Group:Electronics > Components > Transistors
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PBHV8115Z 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor Rev. 02 -- 9 December 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115Z. 1.2 Features I High voltage I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I AEC-Q101 qualified I Medium power SMD plastic package 1.3 Applications I LED driver for LED chain module I LCD backlighting I High Intensity Discharge (HID) front lighting I Automotive motor management I Hook switch for wired telecom I Switch Mode Power Supply (SMPS) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 150 V IC collector current - - 1 A hFE DC current gain VCE = 10 V; 100 250 - IC = 50 mA NXP Semiconductors PBHV8115Z 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 base 4 2, 4 2 collector 3 emitter 1 4 collector 1 2 3 3 sym016 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBHV8115Z SC-73 plastic surface-mounted package with increa

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