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STW55NM60N N-channel 600 V, 0.047 , 51 A, MDmeshTM II Power MOSFET TO-247 Features VDSS RDS(on) Type ID (@Tjmax) max STW55NM60N 650 V < 0.060 51 A 100% avalanche tested 3 Low input capacitance and gate charge 2 1 Low gate input resistance TO-247 Application Switching applications Description Figure 1. Internal schematic diagram This series of devices is designed using the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order code Marking Package Packaging STW55NM60N W55NM60N TO-247 Tube July 2008 Rev 4 1/12 www.st.com 12 Contents STW55NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuit ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STW55NM60N Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 600 V VGS Gate- source voltage