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STU9NC80Z STU9NC80ZI N-CHANNEL 800V - 0.82 - 8.6A Max220/I-Max220 Zener-Protected PowerMESHTMIII MOSFET TYPE VDSS RDS(on) ID STU9NC80Z 800 V <0.9 8.6 A STU9NC80ZI 800 V <0.9 8.6 A s TYPICAL RDS(on) = 0.82 s EXTREMELY HIGH dv/dt CAPABILITY s GATE-TO-SOURCE ZENER DIODES 3 s 100% AVALANCHE TESTED 2 1 s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED Max220 I-Max220 DESCRIPTION The third generation of MESH OVERLAYTM Power MOSFETs for very high voltage exhibits unsur- passed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capabil- ity with higher ruggedness performance as request- ed by a large variety of single-switch applications. APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STU9NC80Z STU9NC80ZI VDS Drain-source Voltage (VGS = 0) 800 V VDGR Drain-gate Voltage (RGS = 20 k) 800 V VGS Gate- source Voltage