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STW20NM60 N-CHANNEL 600V - 0.26 - 20A TO-247 MDmeshTMPower MOSFET TYPE VDSS RDS(on) ID STW20NM60 600V < 0.29 20 A n TYPICAL RDS(on) = 0.26 n HIGH dv/dt AND AVALANCHE CAPABILITIES n 100% AVALANCHE TESTED n LOW INPUT CAPACITANCE AND GATE 3 CHARGE 2 1 n LOW GATE INPUT RESISTANCE n TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS TO-247 DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain pro- cess with the Company's PowerMESHTM horizontal layout. The resulting product has an outstanding low INTERNAL SCHEMATIC DIAGRAM on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. APPLICATIONS The MDmeshTM family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 k) 600 V VGS Gate- source Voltage