Philips pbss4041pz free download

File name pbss4041pz.pdf

PBSS4041PZ 60 V, 5.7 A PNP low VCEsat (BISS) transistor Rev. 01 -- 31 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4041NZ. 1.2 Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -60 V IC collector current - - -5.7 A ICM peak collector current single pulse; - - -15 A tp 1 ms RCEsat collector-emitter IC = -5 A; [1] - 29 43.5 m saturation resistance IB = -500 mA [1] Pulse test: tp 300 s; 0.02. NXP Semiconductors PBSS4041PZ 60 V, 5.7 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 base 4 2, 4 2 collector 3 emitter 1 4 collector 1 2 3 3