Philips bf1216 free download

File name bf1216.pdf

BF1216 Dual N-channel dual gate MOSFET Rev. 01 -- 29 April 2010 Product data sheet 1. Product profile 1.1 General description The BF1216 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and very good cross modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor is available as a SOT363 micro-miniature plastic package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Two low noise gain controlled amplifiers in a single package; both with a partly integrated bias Superior cross modulation performance during AGC High forward transfer admittance High forward transfer admittance to input capacitance ratio 1.3 Applications Gain controlled low noise amplifiers for VHF and UHF applications running on a 5 V supply voltage digital and analog television tuners professional communication equipment NXP Semiconductors BF1216 Dual N-channel dual gate MOSFET 1.4 Quick reference data Table 1. Quick reference data for amplifier A and B Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage DC - - 6 V ID drain current DC - - 30 mA Ptot total power dissipation Tsp 107