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File name: | stw12nb60.pdf [preview stw12nb60] |
Size: | 250 kB |
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Mfg: | ST |
Model: | stw12nb60 🔎 |
Original: | stw12nb60 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors ST stw12nb60.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 16-07-2020 |
User: | Anonymous |
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Extracted files: | 1 | |
File name stw12nb60.pdf STW12NB60 N-CHANNEL 600V - 0.5 - 12A TO-247 PowerMeshTMII MOSFET TYPE VDSS RDS(on) ID STW12NB60 600V < 0.6 12 A s TYPICAL RDS(on) = 0.5 s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES 3 s GATE CHARGE MINIMIZED 2 1 DESCRIPTION TO-247 Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout INTERNAL SCHEMATIC DIAGRAM coupled with the Company's proprieraty edge termi- nation structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. APPLICATIONS s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 k) 600 V VGS Gate- source Voltage |
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