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MJE13009 SILICON NPN SWITCHING TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13009 is a multiepitaxial mesa NPN transistor. It is mounted in Jedec TO-220 plastic package, intended for use in motor controls, switching regulators, deflection circuits, etc. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCEO Collector-Emitter Voltage (IB = 0) 400 V VCEV Collector-Emitter Voltage (VBE = -1.5 V) 700 V VEBO Emitter-Base Voltage (I C = 0) 9 V IC Collector Current 12 A ICM Collector Peak Current (t p 10 ms) 24 A IB Base Current 6 A I BM Base Peak Current (t p 10 ms) 12 A IE Emitter Current 18 A I EM Emitter Peak Current 36 A Pt ot Tot al Power Dissipation at T c 25 Co 100 W o T stg Storage Temperature -65 to 150 C o Tj Max. Ope rating Junction Temperature 150 C September 1997 1/6 MJE13009 THERMAL DATA o R thj-ca se Thermal Resistance Junction-case Max 1.25 C/W o ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICEV Collecto r Cut-of f VCEV = rated value 1 mA Current VBE(off ) = 1.5 V