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2SA1 57 9 TRANSISTOR(PNP) SOT-323 1. BASE FEATURES 2. EMITTER High breakdown voltage. (BVCEO = -120V) 3. COLLECTOR Complements the 2SC4102 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -50 mA PC Collector Dissipation 100 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50A,IE=0 -120 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -120 V Emitter-base breakdown voltage V(BR)EBO IE=-50A,IC=0 -5 V Collector cut-off current ICBO VCB=-100V,IE=0 -0.5 A Emitter cut-off current IEBO VEB=-4V,IC=0 -0.5 A DC current gain hFE VCE=-6V,IC=-2mA 180 560 Collector-emitter saturation voltage VCE(sat) IC=-10mA,IB=-1mA -0.5 V Transition frequency fT VCE=-12V,IC=-2mA,f=30MHz 140 MHz Collector output capacitance Cob VCB=-12V,IE=0,f=1MHz 3.2 pF CLASSIFICATION OF hFE Rank R S Range 180-390 270-560 Marking RR RS 1 JinYu www.htsemi.com semiconductor 2SA1 5 7 9 Typical Characteristics 2 JinYu www.htsemi.com semiconductor