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STB80N20M5 STP80N20M5 N-channel 200 V, 0.019 , 61 A, TO-220, D2PAK MDmeshTM V Power MOSFET Features VDSS @ RDS(on) Type ID TJmax max STB80N20M5 61 A 200 V < 0.023 STP80N20M5 61 A 3 3 2 1 Amongst the best RDS(on) * area 1 High dv/dt capability TO-220 D2PAK Excellent switching performance Easy to drive 100% avalanche tested Application Figure 1. Internal schematic diagram Switching applications Description The devices are N-channel MDmeshTM V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics' well-known PowerMESHTM horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order codes Marking Package Packaging STB80N20M5 80N20M5 D2PAK Tape and reel STP80N20M5 80N20M5 TO-220 Tube July 2010 Doc ID 15734 Rev 2 1/14 www.st.com 14 Contents STB80N20M5, STP80N20M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6 3 Test circuits ... 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . .