KEC khb8d8n25p f f2 free download

File name khb8d8n25p_f_f2.pdf

SEMICONDUCTOR KHB8D8N25P/F/F2 N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB8D8N25P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters and switching mode power supplies. FEATURES VDSS= 250V, ID= 8.8A Drain-Source ON Resistance : RDS(ON)=450m @VGS = 10V Qg(typ.) = 29.5nC MAXIMUM RATING (Ta=25 ) RATING KHB8D8N25F CHARACTERISTIC SYMBOL KHB8D8N25F UNIT KHB8D8N25P KHB8D8N25F2 Drain-Source Voltage VDSS 250 V Gate-Source Voltage VGSS 30 V @TC=25 ID 8.8 8.8* Drain Current A Pulsed (Note1) IDP 35.2 35.2* Single Pulsed Avalanche Energy EAS 285 mJ (Note 2) Repetitive Avalanche Energy EAR 7.4 mJ (Note 1) Peak Diode Recovery dv/dt dv/dt 5.5 V/ns (Note 3) Drain Power Ta=25 74 38 W PD Dissipation Derate above 25 0.59 0.3 W/ Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 KHB8D8N25F2 Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 1.69 3.29 /W Thermal Resistance, Junction-to- RthJA 62.5 62.5 /W Ambient * : Drain current limited by maximum junction temperature. PIN CONNECTION 2007. 5. 10 Revision No : 0 1/7 KHB8D8N25P/F/F2 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION