Microsemi 2n5664-65-66-67 free download

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TECHNICAL DATA NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 Devices Qualified Level Devices Qualified Level JAN JAN 2N5666 2N5667 JANTX 2N5664 2N5665 JANTX 2N5666S 2N5667S JANTXV JANTXV JANS MAXIMUM RATINGS 2N5664 2N5665 Ratings Symbol 2N5666, S 2N5667, S Unit Collector-Emitter Voltage VCEO 200 300 Vdc Collector-Base Voltage 250 400 Vdc TO-66* (TO-213AA) VCBO 6.0 Vdc 2N5664, 2N5665 Emitter-Base Voltage VEBO Base Current IB 1.0 Adc Collector Current IC 5.0 Adc 2N5664 2N5666, S 2N5665 2N5667, S Total Power Dissipation @ TA = +250C PT 2.5 (1) 1.2 (2) W TO-5* @ TC = +1000C 30 (3) 15 (4) W 2N5666, 2N5667 0 Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 C 1) Derate linearly 14.3 mW/0C for TA > +250C 2) Derate linearly 6.9 mW/0C for TA > +250C 3) Derate linearly 300 mW/0C for TC >+1000C 4) Derate linearly 150 mW/0C for TC > +1000C TO-39* (TO-205AD) 2N5666S, 2N5667S *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)