Microsemi 2n5581 2n5582 free download

File name 2n5581_2n5582.pdf

TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/423 Devices Qualified Level JAN 2N5581 2N5582 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Value Unit Collector-Emitter Voltage VCEO 50 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current IC 800 mAdc Total Power Dissipation @ TA = 250C (1) 0.5 W PT @ TC = 250C (2) 2.0 W TO-46* 0 Operating & Storage Junction Temperature Range Top, Tstg -55 to +200 C (TO-206AB) 1) Derate linearly 2.86 mW/0C for TA > 250C 2) Derate linearly 11.43 mW/0C for TC > 250C *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO 50 Vdc IC = 10 mAdc Collector-Base Cutoff Current VCB = 60 Vdc ICBO 10 Adc VCB = 75 Vdc 10