Philips blf573s free download

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BLF573S HF / VHF power LDMOS transistor Rev. 02 -- 17 February 2009 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. Table 1. Production test information Mode of operation f VDS PL Gp D (MHz) (V) (W) (dB) (%) CW 225 50 300 27.2 70 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA: N Average output power = 300 W N Power gain = 27.2 dB N Efficiency = 70 % I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (HF and VHF band) I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications I Industrial, scientific and medical applications I Broadcast transmitter applications NXP Semiconductors BLF573S HF / VHF power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 drain 1 1 2 gate 3 3 source [1] 2 2 3 sym112 [1] Connected to f