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File name: | stw9nb80.pdf [preview stw9nb80] |
Size: | 279 kB |
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Mfg: | ST |
Model: | stw9nb80 🔎 |
Original: | stw9nb80 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors ST stw9nb80.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 18-07-2020 |
User: | Anonymous |
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Decompress result: | OK | |
Extracted files: | 1 | |
File name stw9nb80.pdf STW9NB80 N-CHANNEL 800V - 0.85 - 9.3A TO-247 PowerMESHTM MOSFET TYPE VDSS RDS(on) ID STW9NB80 800V <1 9A s TYPICAL RDS(on) = 0.85 s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES 3 s GATE CHARGE MINIMIZED 2 1 s) DESCRIPTION TO-247 t( Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout INTERNAL SCHEMATIC DIAGRAM d uc ro coupled with the Company's proprieraty edge termi- nation structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and P te unrivalled gate charge and switching characteris- tics. le so Ob APPLICATIONS s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING - (s) EQUIPMENT AND UNINTERRUPTIBLE ct POWER SUPPLIES AND MOTOR DRIVE o du Pr ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit e let VDS Drain-source Voltage (VGS = 0) 800 V VDGR Drain-gate Voltage (RGS = 20 k) |
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