ST stw9nb80 free download

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STW9NB80 N-CHANNEL 800V - 0.85 - 9.3A TO-247 PowerMESHTM MOSFET TYPE VDSS RDS(on) ID STW9NB80 800V <1 9A s TYPICAL RDS(on) = 0.85 s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES 3 s GATE CHARGE MINIMIZED 2 1 s) DESCRIPTION TO-247 t( Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout INTERNAL SCHEMATIC DIAGRAM d uc ro coupled with the Company's proprieraty edge termi- nation structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and P te unrivalled gate charge and switching characteris- tics. le so Ob APPLICATIONS s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING - (s) EQUIPMENT AND UNINTERRUPTIBLE ct POWER SUPPLIES AND MOTOR DRIVE o du Pr ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit e let VDS Drain-source Voltage (VGS = 0) 800 V VDGR Drain-gate Voltage (RGS = 20 k)