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File name: | stgw35hf60wd.pdf [preview stgw35hf60wd] |
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Group: | Electronics > Components > Transistors |
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File name stgw35hf60wd.pdf STGW35HF60WD 35 A, 600 V ultra fast IGBT Features Improved Eoff at elevated temperature Minimal tail current Low conduction losses VCE(sat) classified for easy parallel connection Ultra fast soft recovery antiparallel diode 3 2 Applications 1 Welding TO-247 High frequency converters Power factor correction Description Figure 1. Internal schematic diagram The STGW35HF60WD is based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses. The device is tailored to high switching frequency operation (over 100 kHz). Table 1. Device summary Order code Marking(1) Package Packaging GW35HF60WDA STGW35HF60WD GW35HF60WDB TO-247 Tube GW35HF60WDC 1. Collector-emitter saturation voltage is classified in group A, B and C, see Table 5: VCE(sat) classification. STMicroelectronics reserves the right to ship from any group according to production availability. May 2010 Doc ID 15592 Rev 5 1/12 www.st.com 12 Electrical ratings STGW35HF60WD 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0) 600 V (1) IC Continuous collector current at TC = 25 |
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