LGE 2sd1761 free download

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2SD1761(NPN) TO-220F Bipolar Transistors TO-220F 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Low collector saturation voltage: Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A Excellent current characteristics of DC current gain. Large collector power dissipation: PC=30W(TC=25) Complementary pair with 2SB1187 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 3 A pC Collector Power dissipation 2 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50uA, IE=0 80 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=50uA,IC=0 5 V Collector cut-off current ICBO VCB=60V,IE=0 10 uA Emitter cut-off current IEBO VEB=4V,IC=0 10 uA DC current gain hFE(1) VCE=5V,IC=0.5A 60 320 Collector-emitter saturation voltage VCE(sat) IC=2A,IB=0.2A 1 V Base-emitter saturation voltage VBE(sat) IC=2A,IB=0.2A