Text preview for : 2sd1761.pdf part of LGE 2sd1761 . Electronic Components Datasheets Active components Transistors LGE 2sd1761.pdf
Back to : 2sd1761.pdf | Home
2SD1761(NPN)
TO-220F Bipolar Transistors
TO-220F
1. BASE
2. COLLECTOR
3. EMITTER
1 2 3
Features
Low collector saturation voltage:
Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A
Excellent current characteristics of DC current gain.
Large collector power dissipation: PC=30W(TC=25)
Complementary pair with 2SB1187
MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 80 V
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 3 A
pC Collector Power dissipation 2 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=50uA, IE=0 80 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 60 V
Emitter-base breakdown voltage V(BR)EBO IE=50uA,IC=0 5 V
Collector cut-off current ICBO VCB=60V,IE=0 10 uA
Emitter cut-off current IEBO VEB=4V,IC=0 10 uA
DC current gain hFE(1) VCE=5V,IC=0.5A 60 320
Collector-emitter saturation voltage VCE(sat) IC=2A,IB=0.2A 1 V
Base-emitter saturation voltage VBE(sat) IC=2A,IB=0.2A 1.5 V
Transition frequency fT VCE=5V,IC=0.5A 8 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 90 pF
CLASSIFICATION OF hFE(1)
Rank D E F
Range 60-120 100-200 160-320
2SD1761(NPN)
TO-220F Bipolar Transistors
Typical Characteristics