Philips bfg35 free download

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DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification 1999 Aug 24 Supersedes data of 1995 Sep 12 NXP Semiconductors Product specification NPN 4 GHz wideband transistor BFG35 DESCRIPTION PINNING NPN planar epitaxial transistor PIN DESCRIPTION lfpage 4 mounted in a plastic SOT223 1 emitter envelope, intended for wideband amplifier applications. It features high 2 base output voltage capabilities. 3 emitter 4 collector 1 2 3 Top view MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCEO collector-emitter voltage open base 18 V IC DC collector current 150 mA Ptot total power dissipation up to Ts = 135 C (note 1) 1 W hFE DC current gain IC = 100 mA; VCE = 10 V; Tj = 25 C 25 70 fT transition frequency IC = 100 mA; VCE = 10 V; 4 GHz f = 500 MHz; Tamb = 25 C GUM maximum unilateral power gain IC = 100 mA; VCE = 10 V; 15 dB f = 500 MHz; Tamb = 25 C IC = 100 mA; VCE = 10 V; 11 dB f = 800 MHz; Tamb = 25 C Vo output voltage IC = 100 mA; VCE = 10 V; 750 mV dim = 60 dB; RL = 75 ; f(p+qr) = 793.25 MHz; Tamb = 25 C LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO c