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BDW83C BDW84C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s BDW83C IS A SGS-THOMSON PREFERRED SALESTYPE s COMPLEMENTARY PNP - NPN DEVICES s HIGH CURRENT CAPABILITY s FAST SWITCHING SPEED s HIGH DC CURRENT GAIN APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL 3 2 EQUIPMENT 1 DESCRIPTION The BDW83C is a silicon epitaxial-base NPN TO-218 power monolithic Darlington transistor mounted in Jedec TO-218 plastic package. It is intended for use in power linear and switching applications. The complementary type is BDW84C. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BDW83C PNP BDW84C V CBO Collector-Base Voltage (I E = 0) 100 V V CEO Collector-Emitter Voltage (I B = 0) 100 V V EBO Emitter-Base Voltage (I C = 0) 5 V IC Collector Current 15 A I CM Collector Peak Current 40 A IB Base Current 0.5 A P tot Total Dissipation at T c 25 o C 130 W o T stg Storage Temperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C June 1997 1/4 BDW83C / BDW84C THERMAL DATA o R thj-case Thermal Resistance Junction-case Max 0.96 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CBO Collector Cut-off V CB = 100 V 500