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File name: | ceh2310.pdf [preview ceh2310] |
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Model: | ceh2310 🔎 |
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Descr: | . Electronic Components Datasheets Active components Transistors CET ceh2310.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 19-07-2020 |
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File name ceh2310.pdf CEH2310 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 6.2A , RDS(ON) = 33m @VGS = 10V. RDS(ON) = 38m @VGS = 4.5V. RDS(ON) = 50m @VGS = 2.5V. RDS(ON) = 60m @VGS = 1.8V. D(1,2,5,6,) High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. 4 TSOP-6 package. 5 6 G(3) 3 2 1 TSOP-6 S(4) ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS |
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