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CEH2310
N-Channel Enhancement Mode Field Effect Transistor

FEATURES

30V, 6.2A , RDS(ON) = 33m @VGS = 10V.
RDS(ON) = 38m @VGS = 4.5V.
RDS(ON) = 50m @VGS = 2.5V.
RDS(ON) = 60m @VGS = 1.8V.
D(1,2,5,6,)
High dense cell design for extremely low RDS(ON).

Rugged and reliable.

Lead-free plating ; RoHS compliant.
4
TSOP-6 package. 5
6 G(3)
3
2
1
TSOP-6 S(4)

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS