Philips bf1108 bf1108r free download

File name bf1108_bf1108r.pdf

BF1108; BF1108R Silicon RF switches Rev. 04 -- 29 May 2008 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET can be isolated from ground with the diode, resulting in low losses. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Specially designed for low loss RF switching up to 1 GHz 1.3 Applications I Various RF switching applications such as: N Passive loop through for VCR tuner N Transceiver switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Lins(on) on-state insertion loss RS = RL = 50 ; f 1 GHz; [1] - - 2 dB VSK = VDK = 0 V; IF = 0 mA ISLoff off-state isolation RS = RL = 50 ; f 1 GHz; 30 - - dB VSK = VDK = 5 V; IF = 1 mA RDSon drain-source on-state VKS = 0 V; ID = 1 mA - 12 20 resistance VGS(p) gate-source pinch-off VDS = 1 V; ID = 20