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BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s NPN TRANSISTOR s HIGH VOLTAGE CAPABILITY s FAST SWITCHING SPEED APPLICATIONS: s FLYBACK AND FORWARD SINGLE 3 TRANSISTOR LOW POWER CONVERTERS 2 1 TO-220 DESCRIPTION The BUT11A is a silicon multiepitaxial mesa NPN transistor in Jedec TO-220 plastic package, particularly intended for switching application. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CES Collector-Emitter Voltage (V BE = 0 V) 1000 V V CEO Collector-Emitter Voltage (I B = 0) 450 V V EBO Emitter-Base Voltage (I C = 0) 9 V IC Collector Current 5 A I CM Collector Peak Current 10 A IB Base Current 2 A I BM Base Peak Current 4 A P tot Total Power Dissipation at T c 25 o C 83 W o T stg Storage Temperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C June 1997 1/4 BUT11A THERMAL DATA o R thj-case Thermal Resistance Junction-case Max 1.5 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CES Collector Cut-off V CE = rated V CES 1 mA o Current (V BE = 0) at T case = 125 C 2 mA I EBO Emitter Cut-off Current IC = 0 V BE = 9 V 10