Philips php6n10e 1 free download

File name php6n10e_1.pdf

Philips Semiconductors Product specification PowerMOS transistor PHP6N10E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 100 V avalanche energy capability, stable ID Drain current (DC) 6.3 A blocking voltage, fast switching and Ptot Total power dissipation 50 W high thermal cycling performance RDS(ON) Drain-source on-state resistance 0.54 with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain 1 23 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ID Continuous drain current Tmb = 25