KEC kma4d5p20xa free download

File name kma4d5p20xa.pdf

SEMICONDUCTOR KMA4D5P20XA TECHNICAL DATA P-CH Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for cellular phone and netebook computer power management and other battery powered circuits. FEATURES VDSS=-20V, ID=-4.5A. Drain-Source ON Resistance. : RDS(ON)=60m (Max.) @ VGS=-4.5V : RDS(ON)=110m (Max.) @ VGS=-2.5V MAXIMUM RATING (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS 12 V DC I D* -4.5 A Drain Current Pulsed IDP* -16 A Continuous Source Current IS -1.3 A Ta=25 2.0 Drain Power Dissipation P D* W Ta=70 1.3 Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Thermal Resistance, Junction to Ambient RthJA* 62.5 /W * Surface Mounted on 1 1 FR4 Board, t 5sec 2008. 7. 24 Revision No : 1 1/4 KMA4D5P20XA ELECTRICAL CHARACTERISTICS (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS VGS=0V, IDS=-250 A, -20 - - V VGS=0V, VDS=-20V - - -1 Drain Cut-off Current IDSS A VGS=0V, VDS=-20V, Tj=70 - - -5 Gate Leakage Current IGSS VGS= 12V, VDS=0V - - 100 nA Gate Threshold Voltage Vth* VDS=VGS, ID=-250 A -0.6 - -1.3 V VGS=-4.5V, ID=-4.5A - 49 60 Drain-Source ON Resistance RDS(ON)*