Philips bfq67w cnv free download

File name bfq67w_cnv.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BFQ67W NPN 8 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67W FEATURES PINNING High power gain PIN DESCRIPTION Low noise figure Code: V2 High transition frequency 1 base handbook, 2 columns 3 Gold metallization ensures 2 emitter excellent reliability 3 collector SOT323 envelope. 1 2 DESCRIPTION Top view MBC870 NPN transistor in a plastic SOT323 envelope. It is designed for wideband applications such as satellite TV Fig.1 SOT323. tuners and RF portable communications equipment up to 2 GHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter 20 V VCEO collector-emitter voltage open base 10 V IC DC collector current 50 mA Ptot total power dissipation up to Ts = 118 C; note 1 300 mW hFE DC current gain IC = 15 mA; VCE = 5 V; Tj = 25 C 60 100 fT transition frequency IC = 15 mA; VCE = 8 V; f = 2 GHz; 8 GHz Tamb = 25 C GUM maximum unilateral power gain Ic = 15 mA; VCE = 8 V; f = 1 GHz; 13 dB Tamb = 25 C F noise figure Ic = 5 mA; VCE = 8 V; f = 1 GHz 1.3 dB LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage