ST pd84008-e pd84008s-e free download

File name pd84008-e_pd84008s-e.pdf

PD84008-E PD84008S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary Data Features Excellent thermal stability Common source configuration POUT = 8 W with 14.7 dB gain @ 870 MHz / 7.5 V Plastic package PowerSO-10RF ESD protection (formed lead) In compliance with the 2002/95/EC european directive Description The PD84008-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It PowerSO-10RF operates at 13.6 V in common source mode at (straight lead) frequencies of up to 1 GHz. PD84008-E boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the first true Figure 1. Pin connection SMD plastic RF power package, PowerSO-10RF. Source PD84008-E's superior linearity performance makes it an ideal solution for portable radio applications. The PowerSO-10 plastic package, designed to Gate Drain offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) Table 1. Device summary Part number Package Packing PD84008-E PowerSO-10RF (formed lead) Tube PD84008S-E PowerSO-10RF (straight lead) Tube PD84008TR-E PowerSO-10RF (formed lead) Tape and reel PD84008STR-E PowerSO-10RF (straight lead) Tape and reel December 2007 Rev 1 1/15 This is preliminary information o