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Descr: . Electronic Components Datasheets Active components Transistors ST st13007.pdf
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ST13007 High voltage fast-switching NPN power transistor Features DC current gain classification TAB High voltage capability Low spread of dynamic parameters Very high switching speed Applications 3 2 1 Electronic ballast for fluorescent lighting Switch mode power supplies TO-220 Description Figure 1. Internal schematic diagram The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Table 1. Device summary Order code Marking (1) Package Packaging ST13007A ST13007 TO-220 Tube ST13007B 1. The product is classified in DC current gain group A and group B, see Table 5: hFE classification. STMicroelectronics reserves the right to ship from any group according to production availability. December 2009 Doc ID 5263 Rev 4 1/11 www.st.com 11 Electrical ratings ST13007 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VBE = 0) 700 V VCEO Collector-emitter voltage (IB = 0) 400 V VEBO Emitter-base voltage (IC = 0) 9 V IC Collector current 8 A ICM Collector peak current (tP < 5 ms) 16 A IB Base current 4 A IBM Base peak current (tP < 5 ms) 8 A PTOT Total dissipation at Tc = 25

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