Philips pbss4160dpn free download

File name pbss4160dpn.pdf

PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor Rev. 03 -- 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications Complementary MOSFET driver Half and full bridge motor drivers Dual low power switches (e.g. motors, fans) Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1 (NPN) VCEO collector-emitter voltage open base - - 60 V IC collector current (DC) [1] - - 1 A ICM peak collector current single pulse; tp 1 ms - - 2 A RCEsat collector-emitter saturation IC = 1 A; IB = 100 mA [2] - 200 250 m resistance TR2 (PNP) VCEO collector-emitter voltage open base - - -60 V IC collector current (DC) [1] - - -900 mA ICM peak collector current single pulse; tp 1 ms - - -2 A RCEsat collector-emitter saturation IC = -1 A; IB = -100 mA [2] - 250 330 m resistance [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [2] Pulse test: tp 300 s; 0.02. NXP Semiconductors PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1 emitter TR1