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2N5322 2N5323 SMALL SIGNAL PNP TRANSISTORS s SILICON EPITAXIAL PLANAR PNP TRANSISTORS s MEDIUM POWER AMPLIFIER s NPN COMPLEMENTS ARE 2N5320 AND 2N5321 DESCRIPTION The 2N5322 and 2N5323 are silicon epitaxial planar PNP transistors in Jedec TO-39 metal case. They are especially intended for high-voltage medium power application in industrial and commercial equipments. TO-39 The complementary NPN types are respectively the 2N5320 and 2N5321 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N5322 2N5323 V CBO Collector-Base Voltage (I E = 0) -100 -75 V V CEV Collector-Emitter Voltage (V BE = -1.5V) -100 -75 V V CEO Collector-Emitter Voltage (I B = 0) -75 -50 V V EBO Emitter-Base Voltage (I C = 0) -6 -5 V IC Collector Current -1.2 A I CM Collector Peak Current -2 A IB Base Current -1 A P tot Total Dissipation at T amb = 25 o C 1 W P tot Total Dissipation at T c = 25 o C 10 W o T stg , T j Storage and Junction Temperature -65 to 200 C June 1997 1/4 2N5322/2N5323 THERMAL DATA o R thj-case Thermal Resistance Junction-Case Max 17.5 C/W o R thj-amb Thermal Resistance Junction-Ambient Max 175 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CBO Collector Cut-off V CB = -80 V for 2N5322 -0.5