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2STC4468 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 140 V Complementary to 2STA1695 Typical ft = 20 MHz Fully characterized at 125 oC 3 Application 2 1 Audio power amplifier TO-3P Description The device is a NPN transistor manufactured Figure 1. Internal schematic diagram using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70 W to 100 W high fidelity audio frequency amplifier output stage. Table 1. Device summary Order code Marking Package Packaging 2STC4468 2STC4468 TO-3P Tube November 2008 Rev 2 1/9 www.st.com 9 Electrical ratings 2STC4468 1 Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) 200 V VCEO Collector-emitter voltage (IB = 0) 140 V VEBO Emitter-base voltage (IC = 0) 6 V IC Collector current 10 A ICM Collector peak current (tP < 5 ms) 20 A Ptot Total dissipation at Tc = 25