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TR136 High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed 3 Applications 1 2 Electronic ballast for fluorescent lighting TO-220 Electronic transformer for halogen lamps Description The device is manufactured using high voltage Figure 1. Internal schematic diagrams Multi Epitaxial Planar technology for high switching speeds. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a satisfactory RBSOA. Table 1. Device summary Order code Marking Package Packaging TR136 TR136 TO-220 Tube February 2008 Rev 2 1/9 www.st.com 9 Electrical ratings TR136 1 Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit VCES Collector-emitter voltage (VBE = 0) 700 V VCEO Collector-emitter voltage (IB = 0) 400 V VEBO Emitter-base voltage (IC = 0) 9 V IC Collector current 3 A ICM Collector peak current (tP < 5ms) 6 A IB Base current 1.5 A IBM Base peak current (tP < 5ms) 3 A Ptot Total dissipation at Tc 25