Philips bfg135 free download

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DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors Product specification NPN 7GHz wideband transistor BFG135 DESCRIPTION PINNING NPN silicon planar epitaxial transistor PIN DESCRIPTION in a plastic SOT223 envelope, lfpage 4 1 emitter intended for wideband amplifier applications. The small emitter 2 base structures, with integrated 3 emitter emitter-ballasting resistors, ensure 4 collector high output voltage capabilities at a low distortion level. The distribution of the active areas across the surface of the device gives 1 2 3 an excellent temperature profile. Top view MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter 25 V VCEO collector-emitter voltage open base 15 V IC DC collector current 150 mA Ptot total power dissipation up to Ts = 145 C (note 1) 1 W hFE DC current gain IC = 100 mA; VCE = 10 V; Tj = 25 C 80 130 fT transition frequency IC = 100 mA; VCE = 10 V; f = 1 GHz; 7 GHz Tamb = 25 C GUM maximum unilateral power IC = 100 mA; VCE = 10 V; f = 500 MHz; 16 dB gain Tamb = 25 C IC = 100 mA; VCE = 10 V; f = 800 MHz; 12 dB Tamb = 25 C Vo output voltage dim = 60 dB; IC = 100 mA; VCE = 10 V; 850 mV RL = 75 ; Tamb = 25 C; f(p+qr) = 793.25 MHz LIMITING VALUES In a