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STW18NB40 STH18NB40FI N-CHANNEL 400V - 0.19 - 18.4 A TO-247/ISOWATT218 PowerMeshTM MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STW18NB40 400 V < 0.26 18.4 A STH18NB40FI 400 V < 0.26 12.4 A s TYPICAL RDS(on) = 0.19 s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED 3 3 s VERY LOW INTRINSIC CAPACITANCES 2 2 1 1 s GATE CHARGE MINIMIZED TO-247 ISOWATT218 DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termi- nation structure, gives the lowest R DS(on) per area, INTERNAL SCHEMATIC DIAGRAM exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STW18NB40 STH18NB40FI VDS Drain-source Voltage (VGS = 0) 400 V VDGR Drain-gate Voltage (RGS = 20 k) 400 V VGS Gate- source Voltage