Philips bfg403w free download

File name bfg403w.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BFG403W NPN 17 GHz wideband transistor Product specification 1998 Mar 11 Supersedes data of 1997 Oct 29 NXP Semiconductors Product specification NPN 17 GHz wideband transistor BFG403W FEATURES PINNING Low current PIN DESCRIPTION Very high power gain 1 emitter Low noise figure 2 base High transition frequency 3 emitter Very low feedback capacitance. 4 collector APPLICATIONS Pager front ends RF front end handbook, halfpage 3 4 Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) Radar detectors. 2 1 Top view MSB842 DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin Marking code: P3. dual-emitter SOT343R package. Fig.1 Simplified outline SOT343R. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter 10 V VCEO collector-emitter voltage open base 4.5 V IC collector current (DC) 3 3.6 mA Ptot total power dissipation Ts 140 C 16 mW hFE DC current gain IC = 3 mA; VCE = 2 V; Tj = 25 C 50 80 120 Cre feedback capacitance IC = 0; VCB = 2 V; f = 1 MHz 20 fF fT transition frequency IC = 3 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C 17 GHz Gmax maximum power gain IC = 3 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C 22 dB F noise figure IC = 1 mA; VCE = 2 V; f = 900 MHz; S =