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STW20NM50 N-CHANNEL 550V @ Tjmax - 0.20 - 20A TO-247 MDmeshTM MOSFET TYPE VDSS RDS(on) ID (@Tjmax) STW20NM50 550V < 0.25 20 A TYPICAL RDS(on) = 0.20 HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED 3 LOW INPUT CAPACITANCE AND GATE 1 2 CHARGE TO-247 LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain pro- cess with the Company's PowerMESHTM horizontal INTERNAL SCHEMATIC DIAGRAM layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. APPLICATIONS The MDmeshTM family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VGS Gate- source Voltage