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STB50NE08 N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZETM " POWER MOSFET TYPE V DSS R DS(on) ID ST B50NE08 80 V <0.024 50 A s TYPICAL RDS(on) = 0.020 s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s LOW GATE CHARGE AT 100 oC s APPLICATION ORIENTED CHARACTERIZATION 3 1 s FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE D2PAK DESCRIPTION TO-263 This Power MOSFET is the latest development of (suffix "T4") SGS-THOMSON unique "Single Feature SizeTM " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a INTERNAL SCHEMATIC DIAGRAM remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V DS Drain-source Voltage (V GS = 0) 80 V V DGR Drain- gate Voltage (R GS = 20 k) 80 V V GS Gate-source Voltage