ST stp55ne06l free download

File name stp55ne06l.pdf

STP55NE06L STP55NE06LFP N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZETM " POWER MOSFET TYPE V DSS R DS(on) ID STP55NE06L 60 V < 0.022 55 A STP55NE06LFP 60 V < 0.022 28 A s TYPICAL RDS(on) = 0.018 s EXCEPTIONAL dV/dt CAPABILTY s 100% AVALANCHE TESTED s LOW GATE CHARGE 100 oC s HIGH dV/dt CAPABILITY 3 3 s APPLICATION ORIENTED 2 2 1 1 CHARACTERIZATION DESCRIPTION TO-220 TO220FP This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low on- INTERNAL SCHEMATIC DIAGRAM resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP55NE06L STP55NE06LFP V DS Drain-source Voltage (V GS = 0) 60 V V DGR Drain- gate Voltage (R GS = 20 k) 60 V V GS Gate-source Voltage