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STP60NE06-16 STP60NE06-16FP N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZETM " POWER MOSFET TYPE V DSS R DS(on) ID STP60NE06-16 60 V < 0.016 60 A STP60NE06-16FP 60 V < 0.016 35 A s TYPICAL RDS(on) = 0.013 s EXCEPTIONAL dV/dt CAPABILTY s 100% AVALANCHE TESTED s LOW GATE CHARGE 100 oC s HIGH dV/dt CAPABILITY 3 3 s APPLICATION ORIENTED 2 2 CHARACTERIZATION 1 1 DESCRIPTION TO-220 TO220FP This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and INTERNAL SCHEMATIC DIAGRAM less critical alignment steps therefore a remark- able manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS Symbol Parameter Valu e Unit STP60NE06-16 STP60NE06-16F P V DS Drain-source Voltage (V GS = 0) 60 V V DGR Drain- gate Voltage (R GS = 20 k) 60 V V GS Gate-source Voltage