Philips phkd3nq10t free download

File name phkd3nq10t.pdf

PHKD3NQ10T Dual N-channel TrenchMOS standard level FET Rev. 02 -- 16 December 2010 Product data sheet 1. Product profile 1.1 General description Dual standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low Suitable for use in compact designs on-state resistance due to low profile Suitable for high frequency applications due to fast switching characteristics 1.3 Applications DC-to-DC converters Motor and relay drivers 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj 25