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PHKD3NQ10T
Dual N-channel TrenchMOS standard level FET
Rev. 02 -- 16 December 2010 Product data sheet

1. Product profile

1.1 General description
Dual standard level N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.

1.2 Features and benefits
Low conduction losses due to low Suitable for use in compact designs
on-state resistance due to low profile
Suitable for high frequency
applications due to fast switching
characteristics

1.3 Applications
DC-to-DC converters Motor and relay drivers

1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj 25