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STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8 - 2A DPAK/IPAK Zener-Protected MDmeshTMPower MOSFET TYPE VDSS RDS(on) ID STD2NM60 600V < 3.2 2A STD2NM60-1 600V < 3.2 2A s TYPICAL RDS(on) = 2.8 s HIGH dv/dt AND AVALANCHE CAPABILITIES 3 3 2 s 100% AVALANCHE TESTED 1 1 s LOW INPUT CAPACITANCE AND GATE CHARGE s) s LOW GATE INPUT RESISTANCE DPAK IPAK TO-252 t( s TIGHT PROCESS CONTROL AND HIGH TO-251 uc MANUFACTORING YIELDS DESCRIPTION d The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain pro- cess with the Company's PowerMESHTM horizontal ro INTERNAL SCHEMATIC DIAGRAM P layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent le te so avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall Ob dynamic performance that is significantly better than that of similar completition's products. - (s) APPLICATIONS The MDmeshTM family is very suitable for increase ct the power density of high voltage converters allow- ing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS o du