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STD2NM60
STD2NM60-1
N-CHANNEL 600V - 2.8 - 2A DPAK/IPAK
Zener-Protected MDmeshTMPower MOSFET
TYPE VDSS RDS(on) ID
STD2NM60 600V < 3.2 2A
STD2NM60-1 600V < 3.2 2A
s TYPICAL RDS(on) = 2.8
s HIGH dv/dt AND AVALANCHE CAPABILITIES 3 3
2
s 100% AVALANCHE TESTED 1 1
s LOW INPUT CAPACITANCE AND GATE
CHARGE
s)
s LOW GATE INPUT RESISTANCE DPAK IPAK
TO-252
t(
s TIGHT PROCESS CONTROL AND HIGH TO-251
uc
MANUFACTORING YIELDS
DESCRIPTION
d
The MDmeshTM is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company's PowerMESHTM horizontal
ro
INTERNAL SCHEMATIC DIAGRAM
P
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
le te
so
avalanche characteristics. The adoption of the
Company's proprietary strip technique yields overall
Ob
dynamic performance that is significantly better than
that of similar completition's products.
-
(s)
APPLICATIONS
The MDmeshTM family is very suitable for increase
ct
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
o du
Pr
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 600 V
e
let
VDGR Drain-gate Voltage (RGS = 20 k) 600 V
VGS Gate- source Voltage