File information: | |
File name: | am808-14.pdf [preview am808-14] |
Size: | 56 kB |
Extension: | |
Mfg: | ST |
Model: | am808-14 🔎 am80814 |
Original: | am808-14 🔎 |
Descr: | . Electronic Components Datasheets Active components Transistors ST am808-14.pdf |
Group: | Electronics > Components > Transistors |
Uploaded: | 26-07-2020 |
User: | Anonymous |
Multipart: | No multipart |
Information about the files in archive: | ||
Decompress result: | OK | |
Extracted files: | 1 | |
File name am808-14.pdf AM80814-025 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS . . REFRACTORY/GOLD METALLIZATION PRELIMINARY DATA . . EMITTER SITE BALLASTED LOW THERMAL RESISTANCE . . INPUT/OUTPUT MATCHING OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC PACKAGE POUT = 25 W MIN. WITH 7.0 dB GAIN .400 x .400 2LFL (S036) hermetically sealed ORDER CODE BRANDING AM80814-025 80814-25 PIN CONNECTION DESCRIPTION AM80814-025 is a high power silicon Class C tran- sistor designed for ultra-broadband L-Band radar applications. This device is capable of operation over a broad range of pulse widths and duty cycles. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. AM80814-025 is supplied in the industry-standard AMPACTM hermetic Metal/Ceramic package incor- 1. Collector 3. Emitter porating Input/Output impedance matching. 2. Base 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 |
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