Philips buk436w-1000b 1 free download

File name buk436w-1000b_1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK436W-1000B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. VDS Drain-source voltage 1000 V The device is intended for use in ID Drain current (DC) 3.1 A Switched Mode Power Supplies Ptot Total power dissipation 125 W (SMPS), motor control, welding, RDS(ON) Drain-source on-state 5 DC/DC and AC/DC converters, and resistance in general purpose switching applications. PINNING - SOT429 (TO247) PIN CONFIGURATION SYMBOL PIN DESCRIPTION d 1 gate 2 drain g 3 source tab drain 1 2 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 1000 V VDGR Drain-gate voltage RGS = 20 k - 1000 V